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| NTGS3443T1 Power MOSFET 2 Amps, 20 Volts P-Channel TSOP-6 Features * * * * Ultra Low RDS(on) Higher Efficiency Extending Battery Life Miniature TSOP6 Surface Mount Package Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish http://onsemi.com 2 AMPERES 20 VOLTS RDS(on) = 65 mW P-Channel 1256 Applications * Power Management in Portable and Battery-Powered Products, i.e.: Cellular and Cordless Telephones, and PCMCIA Cards MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Thermal Resistance Junction-to-Ambient (Note 1) Total Power Dissipation @ TA = 25C Drain Current - Continuous @ TA = 25C - Pulsed Drain Current (Tp t 10 mS) Thermal Resistance Junction-to-Ambient (Note 2) Total Power Dissipation @ TA = 25C Drain Current - Continuous @ TA = 25C - Pulsed Drain Current (Tp t 10 mS) Thermal Resistance Junction-to-Ambient (Note 3) Total Power Dissipation @ TA = 25C Drain Current - Continuous @ TA = 25C - Pulsed Drain Current (Tp t 10 mS) Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes for 10 Seconds Symbol VDSS VGS RqJA Pd ID IDM RqJA Pd ID IDM RqJA Pd ID IDM TJ, Tstg TL Value -20 "12 244 0.5 -2.2 -10 128 1.0 -3.1 -14 62.5 2.0 -4.4 -20 -55 to 150 260 Unit Volts Volts C/W Watts Amps Amps C/W Watts Amps Amps C/W Watts Amps Amps C C TSOP-6 CASE 318G Style 1 3 4 MARKING DIAGRAM 443 W 443 W = Device Code = Work Week PIN ASSIGNMENT Drain Drain Source 6 5 4 1. Minimum FR-4 or G-10PCB, operating to steady state. 2. Mounted onto a 2 in square FR-4 board (1 sq. 2 oz. cu. 0.06 thick single sided), operating to steady state. 3. Mounted onto a 2 in square FR-4 board (1 sq. 2 oz. cu. 0.06 thick single sided), t t 5.0 seconds. 1 2 3 Drain Drain Gate ORDERING INFORMATION Device NTGS3443T1 NTGS3443T1G Package TSOP-6 TSOP-6 Shipping 3000 Tape & Reel 3000 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2003 1 December, 2003 - Rev. 2 Publication Order Number: NTGS3443T1/D NTGS3443T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Notes 4 & 5) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = -10 mA) Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = -20 Vdc, TJ = 25C) (VGS = 0 Vdc, VDS = -20 Vdc, TJ = 70C) Gate-Body Leakage Current (VGS = -12 Vdc, VDS = 0 Vdc) Gate-Body Leakage Current (VGS = +12 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = -250 mAdc) Static Drain-Source On-State Resistance (VGS = -4.5 Vdc, ID = -4.4 Adc) (VGS = -2.7 Vdc, ID = -3.7 Adc) (VGS = -2.5 Vdc, ID = -3.5 Adc) Forward Transconductance (VDS = -10 Vdc, ID = -4.4 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge BODY-DRAIN DIODE RATINGS Diode Forward On-Voltage Reverse Recovery Time (IS = -1.7 Adc, VGS = 0 Vdc) (IS = -1.7 Adc, dIS/dt = 100 A/ms) VSD trr - - -0.83 30 -1.2 - Vdc ns (VDS = -10 Vdc, VGS = -4.5 Vdc, ID = -4.4 Adc) (VDD = -20 Vdc, ID = -1.0 Adc, VGS = -4.5 Vdc, Rg = 6.0 W) td(on) tr td(off) tf Qtot Qgs Qgd - - - - - - - 10 18 30 31 7.5 1.4 2.9 25 45 50 50 15 - - ns ns ns ns nC nC nC (VDS = -5.0 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss - - - 565 320 120 - - - pF pF pF VGS(th) -0.60 RDS(on) - - - gFS - 8.8 - 0.058 0.082 0.092 0.065 0.090 0.100 mhos -0.95 -1.50 W Vdc V(BR)DSS -20 IDSS - - IGSS - IGSS - - 100 - -100 nAdc - - -1.0 -5.0 nAdc - - mAdc Vdc Symbol Min Typ Max Unit 4. Indicates Pulse Test: P.W. = 300 msec max, Duty Cycle = 2%. 5. Handling precautions to protect against electrostatic discharge is mandatory. http://onsemi.com 2 NTGS3443T1 TYPICAL ELECTRICAL CHARACTERISTICS 8 VGS = -5 V -ID, DRAIN CURRENT (AMPS) 6 TJ = 25C VGS = -3 V VGS = -4.5 V VGS = -4 V VGS = -3.5 V VGS = -2 V -ID, DRAIN CURRENT (AMPS) VGS = -2.5 V 8 VDS = -10 V 6 4 4 TJ = 25C 2 TJ = 125C TJ = -55C 0 0.6 1 1.4 1.8 2.2 2.6 3 2 VGS = -1.5 V 0 0 0.4 0.8 1.2 1.6 2 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS) Figure 2. Transfer Characteristics 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 1.5 2 2.5 3 3.5 4 4.5 5 ID = -4.4 A TJ = 25C 0.16 TJ = 25C 0.14 0.12 0.1 0.08 VGS = -4.5 V 0.06 0.04 VGS = -2.5 V VGS = -2.7 V 0 1 2 3 4 5 6 7 8 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) -ID, DRAIN CURRENT (AMPS) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) Figure 3. On-Resistance vs. Gate-to-Source Voltage Figure 4. On-Resistance vs. Drain Current and Gate Voltage 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 ID = -4.4 A VGS = -4.5 V -IDSS, LEAKAGE (nA) 100 TJ = 125C TJ = 100C 10 1 TJ = 25C 0.1 VGS = 0 V 0.01 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) 0 4 8 12 16 20 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature http://onsemi.com 3 Figure 6. Drain-to-Source Leakage Current vs. Voltage NTGS3443T1 TYPICAL ELECTRICAL CHARACTERISTICS 1200 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 1000 C, CAPACITANCE (pF) 800 600 400 Coss 200 Crss 0 0 2 4 6 8 10 12 14 16 18 20 0 0 1 2 3 4 5 Ciss TJ = 25C VGS = 0 V 5 QT 4 VGS 3 Q1 Q2 2 1 TJ = 25C ID = -4.4 A 6 7 8 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 4 VGS(th), GATE THRESHOLD VOLTAGE (NORMALIZED) 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 ID = -250 mA -IS, SOURCE CURRENT (AMPS) VGS = 0 V 3 TJ = 150C 2 TJ = 25C 1 -25 0 25 50 75 100 125 150 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 TJ, JUNCTION TEMPERATURE (C) -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Gate Threshold Voltage Variation with Temperature Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTGS3443T1 TYPICAL ELECTRICAL CHARACTERISTICS 20 16 POWER (W) 12 8 4 0 0.01 0.10 1.00 TIME (sec) 10.00 100.00 Figure 11. Single Pulse Power NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 1E-03 Single Pulse 1E-02 1E-01 1E+00 1E+01 1E+02 1E+03 0.01 1E-04 SQUARE WAVE PULSE DURATION (sec) Figure 12. Normalized Thermal Transient Impedance, Junction-to-Ambient http://onsemi.com 5 NTGS3443T1 PACKAGE DIMENSIONS TSOP-6 CASE 318G-02 ISSUE K A L 6 5 1 2 4 3 S B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS DIM MIN MAX A 2.90 3.10 B 1.30 1.70 C 0.90 1.10 D 0.25 0.50 G 0.85 1.05 H 0.013 0.100 J 0.10 0.26 K 0.20 0.60 L 1.25 1.55 M 0_ 10 _ S 2.50 3.00 STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0_ 10 _ 0.0985 0.1181 D G M 0.05 (0.002) H C K J SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches Figure 13. TSOP-6 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NTGS3443T1/D |
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